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Atomic Layer Deposition of Transition Metal Thin Films

Wayne State University researchers have circumvented precursor reactivity problems by developing a three-step deposition scheme that entails a transition metal precursor, an organic acid, and a reducing agent. This novel process can produce high purity, low resistivity copper films at 100 °C, which is a significant breakthrough in transition metal ALD...

Published: 2/6/2014 | Inventor(s): Charles Winter, Thomas Knisley, Thiloka Ariyasena

Keywords(s):

Category(s): Materials, Nanomaterials, Physical Sciences, Thin films, Chemical Processing/Synthesis, Industrial & Manufacturing

First Row Transition Metal Diazadiene Film Growth Precursors

Technology Overview Wayne State University researchers have developed a new class of thermally stable, volatile transition chemical compounds that have desirable properties for the growth of thin films of transition metal-containing materials. These novel film precursors have high potential for use in the growth of thin films by chemical vapor...

Published: 3/31/2014 | Inventor(s): Charles Winter, Thomas Knisley

Keywords(s):

Category(s): Chemicals, Materials, Other, Physical Sciences, Thin films